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019
PRELIMINARY
CY7C1019
128K x 8 Static RAM
Features
* High speed -- tAA = 10 ns * CMOS for optimum speed/power * Center power/ground pinout * Automatic power-down when deselected * Easy memory expansion with CE and OE options Writing to the device is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking chip enable (CE) and output enable (OE) LOW while forcing write enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1019 is available in standard 400-mil-wide SOJs.
Functional Description
The CY7C1019 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected.
Logic Block Diagram
Pin Configuration
SOJ Top View
A0 A1 A2 A3 I/O0 INPUT BUFFER CE I/O0 I/O1 VCC VSS I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE I/O7 I/O6 VSS VCC I/O5 I/O4 A12 A11 A10 A9 A8
A0 A1 A2 A3 A4 A5 A6 A7 A8
I/O1 ROW DECODER I/O2 SENSE AMPS
512 x 256 x 8 ARRAY
I/O3 I/O4 I/O5
1019-2
CE WE OE
COLUMN DECODER
POWER DOWN
I/O6
I/O7
Selection Guide
7C1019-10 Maximum Access Time (ns) Maximum Operating Current (mA) L Maximum Standby Current (mA) L
Shaded areas contain advance information.
A9 A 10 A 11 A 12 A 13 A 14 A 15 A 16
1019-1
7C1019-12 12 220 190 10 1
7C1019-15 15 200 175 10 1
10 240 210 10 1
Cypress Semiconductor Corporation Document #: 38-05055 Rev. **
*
3901 North First Street
*
San Jose
*
CA 95134 * 408-943-2600 Revised August 31, 2001
PRELIMINARY
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage on VCC to Relative GND[1] .... -0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ....................................-0.5V to VCC + 0.5V DC Input Voltage[1] ................................-0.5V to VCC + 0.5V
CY7C1019
Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current..................................................... >200 mA
Operating Range
Range Commercial Ambient Temperature[2] 0C to +70C VCC 5V 10%
Electrical Characteristics Over the Operating Range
7C1019-10 Parameter VOH VOL VIH VIL IIX IOZ ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[1] Input Load Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current --TTL Inputs Automatic CE Power-Down Current --CMOS Inputs GND < VI < VCC GND < VI < VCC, Output Disabled VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC - 0.3V, VIN > VCC - 0.3V, or VIN < 0.3V, f=0 L Test Conditions VCC = Min., IOH = -4.0 mA VCC = Min., IOL = 8.0 mA 2.2 -0.3 -1 -5 Min. 2.4 0.4 VCC + 0.3 0.8 +1 +5 240 210 40 L 20 10 L 1 2.2 -0.3 -1 -5 Max. 7C1019-12 Min. 2.4 0.4 VCC + 0.3 0.8 +1 +5 220 190 40 20 10 1 2.2 -0.3 -1 -5 Max. 7C1019-15 Min. 2.4 0.4 VCC + 0.3 0.8 +1 +5 200 175 40 20 10 1 mA mA Max. Unit V V V V A A mA
ISB1
ISB2
Shaded areas contain advance information.
Capacitance[3]
Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 5.0V Max. 6 8 Unit pF pF
Notes: 1. VIL (min.) = -2.0V for pulse durations of less than 20 ns. 2. TA is the "instant on" case temperature. 3. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05055 Rev. **
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PRELIMINARY
AC Test Loads and Waveforms
R1 480 R1 480 5V OUTPUT 30 pF INCLUDING JIG AND SCOPE (a) R2 255 5 pF INCLUDING JIG AND SCOPE (b) R2 255 GND 3.0V 90% 10%
CY7C1019
ALL INPUT PULSES 90% 10%
5V OUTPUT
3ns
3 ns
1019-3 1019-4
Equivalent to:
THEVENIN EQUIVALENT 167 1.73V OUTPUT
Switching Characteristics[4] Over the Operating Range
7C1019-10 Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z OE HIGH to High Z CE LOW to Low Z
[5, 6] [6]
7C1019-12 Min. 12 Max.
7C1019-15 Min. 15 Max. Unit ns 15 3 15 7 0 7 3 7 0 15 15 10 10 0 0 10 8 0 3 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 7 ns
Description
Min. 10
Max.
10 3 10 5 0 5 3 5 0 10 10 8 7 0 0 7 5 0 3 5 12 9 8 0 0 8 6 0 3 0 3 0 3
12 12 6 6 6 12
CE HIGH to High Z[5, 6] CE LOW to Power-Up CE HIGH to Power-Down
[7,8]
WRITE CYCLE
Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z[6] WE LOW to High Z
[5, 6]
6
Shaded areas contain advance information. Note: 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 5. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 8. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 38-05055 Rev. **
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PRELIMINARY
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter VDR ICCDR tCDR tR
[3]
CY7C1019
Description VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time
Conditions No input may exceed VCC + 0.5V VCC = VDR = 3.0V, CE1 > VCC - 0.3V, VIN > VCC - 0.3V or VIN < 0.3V
Min. 2.0
Max 300
Unit V A ns ns
0 tRC
Data Retention Waveform
DATA RETENTION MODE VCC 3.0V tCDR CE
1019-5
VDR > 2V
3.0V tR
Switching Waveforms
Read Cycle No. 1[9, 10]
tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID
1019-6
Read Cycle No. 2 (OE Controlled)[10, 11]
ADDRESS tRC CE tACE OE tDOE tLZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tHZOE tHZCE DATA VALID tPD 50% ISB
1019-7
HIGH IMPEDANCE
DATA OUT
ICC
Notes: 9. Device is continuously selected. OE, CE = VIL. 10. WE is HIGH for read cycle. 11. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05055 Rev. **
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PRELIMINARY
Switching Waveforms (continued)
Write Cycle No. 1 (CE Controlled)[12, 13]
tWC ADDRESS tSCE CE tSA tSCE tAW tPWE WE tSD DATA I/O DATA VALID tHD tHA
CY7C1019
1019-8
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[12, 13]
tWC ADDRESS tSCE CE
tAW tSA WE tPWE
tHA
OE tSD DATA I/O NOTE 14 tHZOE
Notes: 12. Data I/O is high impedance if OE = VIH. 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 14. During this period the I/Os are in the output state and input signals should not be applied.
tHD
DATAIN VALID
1019-9
Document #: 38-05055 Rev. **
Page 5 of 8
PRELIMINARY
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)[13]
CY7C1019
tWC ADDRESS tSCE CE tAW tSA WE tSD DATA I/O NOTE 14 tHZWE DATA VALID tLZWE
1019-10
tHA tPWE
tHD
Truth Table
CE H X L L L OE X X L X H WE X X H L H High Z High Z Data Out Data In High Z I/O0-I/O7 Power-Down Power-Down Read Write Selected, Outputs Disabled Mode Power Standby (ISB) Standby (ISB) Active (ICC) Active (ICC) Active (ICC)
Ordering Information
Speed (ns) 10 12 15 Ordering Code CY7C1019-10VC CY7C1019L-10VC CY7C1019-12VC CY7C1019L-12VC CY7C1019-15VC CY7C1019L-15VC Package Name V33 V33 V33 V33 V33 V33 Package Type 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ 32-Lead 400-Mil Molded SOJ Operating Range Commercial Commercial Commercial
Shaded area contains advance information.
Document #: 38-05055 Rev. **
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PRELIMINARY
Package Diagram
32-Lead (400-Mil) Molded SOJ V33
CY7C1019
Document #: 38-05055 Rev. **
Page 7 of 8
(c) Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
PRELIMINARY
Document Title: 7C1019 128K x 8 Static RAM Document Number: 38-05055 REV. ** ECN NO. 107246 Issue Date 09/10/01 Orig. of Change SZV Description of Change Change from Spec number: 38-00440 to 38-05055
CY7C1019
Document #: 38-05055 Rev. **
Page 8 of 8

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